NPN EPITAXIAL SILICON TRANSISTOR J3Y / S8050 SOT-23 Type: Silicon transistor Usage: NPN Power (Pcm): 1 W Collector current (Icm): 1.5 A Collector-base voltage (V(BR)cbo): 40 V Collector-emitter voltage (V(BR)ceo): 25 V Base-emitter voltage (V(BR)ebo): 6 V Collector cut-off current (Icbo): 0.1 microA Emitter cut-off current (Icbo): 0.1 microA Voltage base-emitter saturation: 0.98 V Voltage collector-emitter saturation: 0.28 V DC current gain: 85-300 Frequency: 100 Mhz Lihat Gambar sebelum membeli ( barang sama dengan foto diatas )....!!