The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. Dynamic dV/dt rating Repetitive avalanche rated 175C Operating temperature Easy to parallel Simple drive requirement
Feature: Transistor Polarity: N Channel Continuous Drain Current Id: 8A Drain Source Voltage Vds: 500V On Resistance Rds(on): 0.85ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 4V Power Dissipation Pd: 125W Transistor Case Style: TO-220AB