ME4542 SOP N and P Channel Dual 8p ME 4542 MOS FET IC MOSFET SMD 30V

GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell Density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES RDS(ON)25m@VGS=10V (N-Ch) RDS(ON)40m@VGS=4.5V (N-Ch) RDS(ON)35m@VGS=-10V (P-Ch) RDS(ON)58m@VGS=-4.5V (P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management DC/DC Converter LCD TV Monitor Display inverter CCFL inverter LCD Display inverter