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Atur jumlah dan catatan
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Rp22.000
Transistor IGBT 30F124 GT30F124 Toshiba 300v
Rp22.000
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: IC&Transistor
Transistor IGBT 30F124 GT30F124 Toshiba 300v
Applications : Plasma display panels
IGBT: Insulated Gate Bipolar Transistor
IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.
Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.
Harap hubungi Toko Bahagia Electronics untuk keterangan lebih lanjut.
Applications : Plasma display panels
IGBT: Insulated Gate Bipolar Transistor
IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.
Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.
Harap hubungi Toko Bahagia Electronics untuk keterangan lebih lanjut.
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