MOSFET 20N60c3 FET 20n60

The 20N60C3 is an N-channel enhancement-mode power MOSFET, well-regarded for its high voltage and current handling capabilities, as well as its low on-resistance. It's commonly used in applications such as power supplies, motor drives, and power converters. Here are the key specifications and features of the 20N60C3:
Key Specifications
Type: N-channel MOSFET
Drain-Source Voltage (Vds): 600V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 20A
Pulsed Drain Current (Id, pulse): 80A
Total Power Dissipation (Pd): 375W (at Tc = 25°C)
Rds(on): 0.165Ω (typical)
Gate Charge (Qg): 140nC (typical)
Threshold Voltage (Vgs(th)): 2.1V - 4.0V
Package: TO-247

Applications
Switch-mode power supplies (SMPS)
DC-DC converters
AC-DC power supplies
Motor control
Power inverters

Features
High Voltage Tolerance: Can handle up to 600V, making it suitable for high-voltage applications.
High Current Capacity: Can continuously conduct 20A of current, with pulsed currents up to 80A.
Low On-Resistance: Rds(on) of 0.165Ω, which helps in reducing conduction losses.
Fast Switching: The low gate charge and high-speed switching characteristics make it efficient in high-frequency applications.
Robust Design: Designed for reliability in high-power applications with significant power dissipation capabilities.

These characteristics make the 20N60C3 MOSFET suitable for high-efficiency and high-reliability applications in various power management and conversion systems.