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Subtotal
Rp9.880
K3568 - MOSFET Transistor 500V 12 A
Rp9.880
Features 1. Low drain-source ON-resistance: RDS (ON)= 0.4 Ω(typ.) 2. High forward transfer admittance: |Yfs| = 8.5 S (typ.) 3. Low leakage current: IDSS= 100 μA (VDS= 500 V) 4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA) Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 500 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 12 A 4. Repetitive Avalanche energy : Ear = 4 mJ 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
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