Transistor IC MOSFET FET IRFP2907 IRF2907PBF IRF 2907 PBF 209A 75V

Silakan di Order Bossku...!!! Tanya #34; Bisa Inbox/WA...!!! Trimakasih...!!! Harga Tertera Untuk 1pcs/1biji/1buah...!!! N-Channel MOSFET Transistor IRFP2907，IIRFP2907 · FEATURES · Static drain-source on-resistance: RDS(on)≤4.5mΩ · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · ·DESCRITION · Ultra Low On-resistance · Fast Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 209 A IDM Drain Current-Single Pulsed 840 A PD Total Dissipation @TC=25℃ 470 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS Rth(j-c) Channel-to-case thermal resistance 0.32 ℃/W Rth(j-a) Channel-to-ambient thermal resistance 40 ℃/W ELECTRICAL CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 75 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=125A 4.5 mΩ IGSS Gate-Source Leakage Current VGS= ±20V ±0.2 μA IDSS Drain-Source Leakage Current VDS=75V; VGS= 0V 20 μA VSD Diode forward voltage IS=125A,