TR MOSET P200NF04L N-CHANNEL 120A 40V RDS 3mΩ TO-220 POWER MOSFET Made in China DESCRIPTION The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less-critical alignement steps therefore a remarkablemanufacturing reproducibility. This new improveddevice has been specifically designed for Automo-tive applications. APPLICATIONS -HIGH CURRENT, HIGH SWITCHING SPEED