sem afm silicon wafer single-sided polished silicon wafer ultra clean

Type : 2-digit Counters DIY Supplies : Plumbing Brand Name : TailKuKe Material : Semiconductor single crystal silicon modname=ckeditor Polished silicon wafer High purity (11N) 1-12 inch single and double polished straight pull single crystal polishing wafer Size 1 #34;2 #34; 3 #34;4 #34; 5 #34;6 #34; 8 #34;12 #34; and special sizes and specifications Surface single polishing sheet, double polishing sheet, abrasive sheet, corrosion sheet, cutting sheet Crystal orientation and various off-angle silicon wafers Thickness 100um 200um 300um 400um 500um 1mm 5mm and other thicknesses, thickness tolerance + -10um, TTV 1000 ohm.cm, gt; 3000 ohm.cm, gt; 5000 ohm.cm, gt; 8000 ohm.cm, gt; 10000 ohm.cm Process parameters Flatness TIR: 3m, warpage TTV: 10m, Bow / Warp40m, roughness0.5nm, granularity 0.3) Packing method Ultra clean aluminum foil vacuum packaging 10 pieces packaging, 25 pieces packaging Customized processing The processing time of model, crystal orientation, thickness, resistivity, etc. is slightly different according to different specifications. Application introduction Used for process and other synchronous radiation sample carrier, PVD / CVD coating as substrate, magnetron sputtering growth sample, XRD, SEM, Atomic force, infrared spectroscopy, fluorescence spectroscopy and other analysis test substrates, molecular beam epitaxial growth substrates, X-ray analysis of crystal semiconductors A silicon oxide layer is formed on the surface of the silicon oxide thermal oxide. In the presence of oxidants at elevated temperatures, the process is called thermal oxidation. Normally the thermal oxide layer is grown in a horizontal tube furnace. The temperature range is controlled at 900 to 1200 d