AOTF11S60L TF11S60 11N60 MOSFET 11A 600V ALPHA OMEGA

BL7

Alpha and Omega Semiconductor AOTF11S60L MOSFETs

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F

Product Category
Power MOSFET
Configuration
Single
Process Technology
AlphaMOS
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.1
Maximum Continuous Drain Current (A)
11
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (MOhm)
399@10V
Typical Gate Charge @ Vgs (nC)
11@10V
Typical Gate Charge @ 10V (nC)
11
Typical Input Capacitance @ Vds (pF)
545@100V
Maximum Power Dissipation (mW)
38000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
20
Typical Turn-Off Delay Time (ns)
59
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220F
Pin Count
3
Lead Shape
Through Hole