SAMSUNG MZ-VLB5120 512GB SSD PM981 PCIE NVME M.2

Performance Sequential Read: Up to 3,000 MB/s Sequential Write: Up to 1,800 MB/s Random Read (4KB): Up to 380K IOPS Random Write (4KB): Up to 440K IOPS Reliability Uncorrectable Bit Error Rate (UBER): lt; 1 sector per 1015 bits read Mean Time Between Failures: 1.5 million hours Power Consumption Active Read: Typ. 5.9 W Active Write: Typ. 5.7 W Idle: Typ. 30 mW L1.2: Typ. 5 mW