SSD Samsung PM981a 256GB NVMe M2 - MZVLB256HBHQ

- Applications: PC & Gaming
- Product Status: DB Only
- Interface: PCIe 3.0 x4
- Form Factor: M.2
- Capacity: 256 GB
- Sequential Read: 3500 MB/s
- Sequential Write: 2200 MB/s
- Random Read: 240K IOPS
- Random Write: 480K IOPS

Physical
- Form Factor: M.2 2280 (Single-Sided)
- Interface: PCIe 3.0 x4
- Protocol: NVMe 1.3

Controller
- Name: Phoenix (S4LR020)
- Architecture: ARM 32-bit Cortex-R7
- Core Count: 5-Core
- Foundry: Samsung FinFET
- Process: 14 nm
- Flash Channels: 8 @ 800 MT/s
- Chip Enables: 4
- Controller Features: DRAM (enabled)

Performance
- Sequential Read: 3,500 MB/s
- Sequential Write: 2,200 MB/s
- Random Read: 240,000 IOPS
- Random Write: 480,000 IOPS
- Endurance: 150 TBW
- MTBF: 1.5 Million Hours
- Drive Writes Per Day (DWPD): 0.3
- SLC Write Cache: approx. 12 GB (9 GB Dynamic + 3 GB Static)
- Speed when Cache Exhausted: approx. 500 MB/s

NAND Flash:
- Name: V-NAND V5
- Part Number: K9CKGY8J5B-CCK0
- Type: TLC
- Technology: 92-layer
- Speed: 533 MT/s .. 1400 MT/s
- Capacity: 2 chips @ 1 Tbit
- Toggle: 4.0
- Topology: Charge Trap
- Dies per Chip: 4 dies @ 256 Gbit
- Planes per Die: 2
- Decks per Die: 1
- Word Lines: 100 per NAND String 92.0% Vertical Efficiency
- Read Time (tR): 73 µs
- Program Time (tProg): 500 µs
- Block Erase Time (tBERS): 3.5 ms
- Die Write Speed: 64 MB/s
- Page Size: 16 KB

DRAM Cache
- Type: LPDDR4-1866
- Name: Samsung K4F4E3S4HF-BGCH
- Capacity: 512 MB (1x 512 MB)
- Organization: 4Gx16