The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz Large PT in Small Package PT : 2 W with 16 cm2 0.7 mm Ceramic Substrate. hFE CLASSIFICATION Marking RF hFE Value 80 to 160, datasheet: http://documentation.renesas.com/doc/YOUSYS/document/PU10211EJ01V0DS.pdf Produk terkait: http://indo-ware.com/produk-2944-smd-2sc3356-2sc3356-c3356.html