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Atur jumlah dan catatan
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Subtotal
Rp6.000
FQP27P06 FQP 27P06 60V 27A TO-220 P-Channel MOSFET Transistor
Rp6.000
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Mosfet Transistor Triac IGBT
Sebelum Order Tanya stok dulu via diskusi atau cek stok di web resmi jogjarobotika ( buka web jogjarobotika com search nama produk)
Toko kami sudah berpengalaman sejak 2011 di bidang penjualan sparepart online/offline.
Pengiriman komponen anda aman dengan packing dus dan bubble pack (free).
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Detail : Cek Gambar
Harga adalah untuk 1 pcs
+==================================================================+
FQP27P06 FQP 27P06 60V 27A TO-220 P-Channel MOSFET Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Toko kami sudah berpengalaman sejak 2011 di bidang penjualan sparepart online/offline.
Pengiriman komponen anda aman dengan packing dus dan bubble pack (free).
+==================================================================+
Detail : Cek Gambar
Harga adalah untuk 1 pcs
+==================================================================+
FQP27P06 FQP 27P06 60V 27A TO-220 P-Channel MOSFET Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
• Low gate charge ( typical 33 nC)
• Low Crss ( typical 120 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
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