FDS6675BZ P-Channel PowerTrench MOSFET -30V -11A 13mΩ SOIC-8

Produk ASLI dari onsemi. MAJOR. Internasional manufacturer. Mfr.Part #: FDS6675BZ FEATURES: - Drain Source Voltage (Vdss) 30V - Continuous Drain Current (Id) 11A - Drain Source On Resistance (RDS(on)@Vgs,Id) 13mΩ@10V,11A - Power Dissipation (Pd) 2.5W - Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA - Type P Channel - Input Capacitance (Ciss@Vds) 2470pF@15V - Total Gate Charge (Qg@Vgs) 62nC@10V - Operating Temperature -55°C~+150°C@(Tj) This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features - Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A - Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A - Extended VGS range (-25V) for battery applications - HBM ESD protection level of 5.4 KV typical (note 3) - High performance trench technology for extremely low rDS(on) - High power and current handing capability - RoHS Compliant Applications - This product is general usage and suitable for many different applications. - Power Management - Load Switch