Original TP2104 P1L P-Channel MOSFET -40V 6.0 Ohm SOT-23 Microchip

Produk ASLI % dari Microchip Technology Mfr.Part #: TP2104K1-G Summary: This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features: - High input impedance and high gain - Low power drive requirement - Ease of paralleling - Low CISS and fast switching speeds - Excellent thermal stability - Integral source-drain diode - Free from secondary breakdown