Characteristics of the 2SB507 bipolar transistor Type - PNP Collector-Emitter Voltage: -60 V Collector-Base Voltage: -60 V Emitter-Base Voltage: -5 V Collector Current: -3 A Collector Dissipation - 30 W DC Current Gain (hfe) - 40 to 320 Transition Frequency - 5 MHz Operating and Storage Junction Temperature Range -55 to +150 °C Package - TO-220