TRANSISTOR IRF730 original 5.5A 400v

Type Designator: IRF730 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 100 W Maximum Drain-Source Voltage |Vds|: 400 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 5.5 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 18 nC Drain-Source Capacitance (Cd): 800 pF Maximum Drain-Source On-State Resistance (Rds): 1 Ohm