4.4/ 5.0
78% pembeli merasa puas
19 rating • 6 ulasan
5(14)73.68%
4(1)5.26%
3(2)10.53%
2(1)5.26%
1(1)5.26%
Atur jumlah dan catatan
Stok Total: 458
Subtotal
Rp10.000
K8A60D K8A60DA TK8A60DA TK8A60D HIGH QUALITY MOSFET N-CHANNEL
Rp10.000
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: sparepart
KA8A60D TK8A60DA ORIGINAL HIGH QUALITY
BARANG SAMA DENGAN FOTO
READY STOK SILAHKAN DI ORDER
DESCRIPTION:
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.8 (typ.)
High forward transfer admittance: Y fs = 4.0 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 600 V) En hancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteri stics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EA S IAR EAR Tch Tstg Rating 600 30 7.5 30 45 270 7.5 4.5 150 55 to 150 Unit V V A W mJ A mJ C C 1: Gate 2: Dra in 3:Source Drain power dissipation (Tc = 25C) Single pul.
BARANG SAMA DENGAN FOTO
READY STOK SILAHKAN DI ORDER
DESCRIPTION:
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.8 (typ.)
High forward transfer admittance: Y fs = 4.0 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 600 V) En hancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteri stics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EA S IAR EAR Tch Tstg Rating 600 30 7.5 30 45 270 7.5 4.5 150 55 to 150 Unit V V A W mJ A mJ C C 1: Gate 2: Dra in 3:Source Drain power dissipation (Tc = 25C) Single pul.
Ada masalah dengan produk ini?