Type: 2SD2499 Material of Transistor: Si Polarity: NPN Built in Bias Resistor R2 = 0.04 kOhm Maximum Collector Power Dissipation (Pc): 50 W Maximum Collector-Base Voltage |Vcb|: 1500 V Maximum Collector-Emitter Voltage |Vce|: 600 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 6 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 2 MHz Collector Capacitance (Cc): 95 pF Forward Current Transfer Ratio (hFE), MIN: 8 Package: TO3PHIS