AO4435 4435 P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS Sony 259 specifications) Features VDS = -30V ID = -10A (VGS = -10V) RDS(ON) 18m' (VGS = -10V) RDS(ON) 36m' (VGS = -5V)