5.0/ 5.0
100% pembeli merasa puas
3 rating • 0 ulasan
5(3)100%
4(0)0%
3(0)0%
2(0)0%
1(0)0%
Atur jumlah dan catatan
Stok Total: Sisa 10
Subtotal
Rp4.599.000
Samsung SSD 990 Evo Plus 2TB NVMe M2 990EVO Gen5 Gen4 M.2
Rp4.599.000
GARANSI RESMI BINTANG MAS 5 TAHUN
SAMSUNG SSD 990 EVO PLUS - 2TB
Seq. Read/Write (MB/s) up to 7,250 / 6,300
Samsung V NAND TLC (V8)
Total Bytes Written (TBW) 1,200
Five Year Warranty ( atau TBW tercapai dahulu)
Berikut adalah spesifikasi lengkap dan terstruktur dari Samsung 990 EVO Plus 2TB NVMe SSD, siap untuk kamu copy-paste atau integrasikan ke sistem:
Samsung 990 EVO Plus 2TB – Spec Summary
General
Model: MZ-V9S2T0BW
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe Gen 4.0 x4 / Gen 5.0 x2
Protocol: NVMe 2.0
Controller: Samsung Piccolo (S4LY022)
NAND Type: Samsung V-NAND V8, 236-layer TLC
DRAM Cache: None (uses Host Memory Buffer, 64MB)
Warranty: 5 years or 1200 TBW
Launch Date: September 25, 2024
Performance
Sequential Read: Up to 7,250 MB/s
Sequential Write: Up to 6,300 MB/s
Random Read: Up to 1,000,000 IOPS
Random Write: Up to 1,350,000 IOPS
SLC Cache Size: ~226 GB (216 GB dynamic + 10 GB static)
Write Speed (after cache exhausted): ~1800 MB/s
Folding Speed (SLC to TLC): ~1500 MB/s
Power Consumption
Idle: 1.1 W
Average: 2.9 W
Maximum: 4.6 W
Physical
Dimensions: 80.15 × 22.15 × 2.38 mm
Weight: ~9.0 g
Endurance & Reliability
TBW (Total Bytes Written): 1200 TB
MTBF: 1.5 million hours
DWPD: 0.3
Environmental
Operating Temperature: 0°C to 70°C
Storage Temperature: -40°C to 85°C
SAMSUNG SSD 990 EVO PLUS - 2TB
Seq. Read/Write (MB/s) up to 7,250 / 6,300
Samsung V NAND TLC (V8)
Total Bytes Written (TBW) 1,200
Five Year Warranty ( atau TBW tercapai dahulu)
Berikut adalah spesifikasi lengkap dan terstruktur dari Samsung 990 EVO Plus 2TB NVMe SSD, siap untuk kamu copy-paste atau integrasikan ke sistem:
Samsung 990 EVO Plus 2TB – Spec Summary
General
Model: MZ-V9S2T0BW
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe Gen 4.0 x4 / Gen 5.0 x2
Protocol: NVMe 2.0
Controller: Samsung Piccolo (S4LY022)
NAND Type: Samsung V-NAND V8, 236-layer TLC
DRAM Cache: None (uses Host Memory Buffer, 64MB)
Warranty: 5 years or 1200 TBW
Launch Date: September 25, 2024
Performance
Sequential Read: Up to 7,250 MB/s
Sequential Write: Up to 6,300 MB/s
Random Read: Up to 1,000,000 IOPS
Random Write: Up to 1,350,000 IOPS
SLC Cache Size: ~226 GB (216 GB dynamic + 10 GB static)
Write Speed (after cache exhausted): ~1800 MB/s
Folding Speed (SLC to TLC): ~1500 MB/s
Power Consumption
Idle: 1.1 W
Average: 2.9 W
Maximum: 4.6 W
Physical
Dimensions: 80.15 × 22.15 × 2.38 mm
Weight: ~9.0 g
Endurance & Reliability
TBW (Total Bytes Written): 1200 TB
MTBF: 1.5 million hours
DWPD: 0.3
Environmental
Operating Temperature: 0°C to 70°C
Storage Temperature: -40°C to 85°C
Ada masalah dengan produk ini?
ULASAN PEMBELI
Belum ada ulasan untuk produk ini
Beli produk ini dan jadilah yang pertama memberikan ulasan