D 998 / D998 Transistor NPN Complementary Silicon Power Transistor
This is 120V, 10A, NPN Power Transistor.
1. With TO-3PML package 2. Complement to type 2SB778 3. Good Linearity of hFE
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 120 V 2. Collector to Emitter Voltage : Vceo = 120 V 3. Emitter to Base Voltage : Vebo = 5 V 4. Collector Current : Ic = 10A 5. Total Dissipation : Pc = 80 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperature : Tsg = -55 ~ +150°C
Applications
1. High power amplifier applications 2. Recommended for 45~50W audio frequency amplifier output stage
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