Type Designator: BD139 Material of transistor: Si Polarity: NPN Maximum collector power dissipation (Pc), W: 12 Maximum collector-base voltage |Ucb|, V: 80 Maximum collector-emitter voltage |Uce|, V: 80 Maximum emitter-base voltage |Ueb|, V: 5 Maximum collector current |Ic max|, A: 1 Maksimalna temperatura (Tj), C: 150 Transition frequency (ft), MHz: 50 Collector capacitance (Cc), pF: Forward current transfer ratio (hFE), min: 40 Package of BD139 transistor: TO126