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Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory Samsung 4GB Low Power DDR4 SDRAM
Performance Sequential Read Up to 7,450 MB/s * Performance may vary based on system hardware & configuration Sequential write Up to 6,900 MB/s * Performance may vary based on system hardware & configuration Random Read (4KB ,QD32) Up to 1,600,000 IOPS * Performance may vary based on system hardware & configuration Random Write (4KB ,QD32) Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration Random Read (4KB ,QD1) Up to 22,000 IOPS * Performance may vary based on system hardware & configuration Random Write (4KB ,QD1) Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Type Interface PCIe Gen 4.0 x4, NVMe 2.0
Environmental Specs Operating Temperature 32°F - 158°F (0 - 70 ℃ Operating Temperature) Shock 1,500 G & 0.5 ms (Half sine)