Type: Bipolar transistor Usage: NPN Power (Pcm): 0.625 W Collector current (Icm): 0.5 A Collector-base voltage (V(BR)cbo): 40 V Collector-emitter voltage (V(BR)ceo): 25 V Base-emitter voltage (V(BR)ebo): 5 V Collector cut-off current (Icbo): 0.1 microA Emitter cut-off current (Icbo): 0.1 microA Voltage base-emitter saturation: 1.2 V Voltage collector-emitter saturation: 0.6 V DC current gain: 40-400 Frequency: 150 Mhz