4.9/ 5.0
97% pembeli merasa puas
238 rating • 72 ulasan
5(216)90.76%
4(17)7.14%
3(4)1.68%
2(0)0%
1(1)0.42%
Atur jumlah dan catatan
Stok Total: 98317
Subtotal
Rp2.500
GBJ2510 Dioda Bridge 25A model sisir diode 1000V AZ35
Rp2.500
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Komponen elektronik
Dioda GBJ2510 diode Bridge rectifier 25A 1000V AZ35
Features
Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product.
Operating Temperature: to +150C Storage Temperature: to +150C Maximum Reccurrent Peak Reverse Voltage 800V 1000V Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000V.
Average Forward IF(AV) = 100C Current Peak Forward Surge IFSM 350A 8.3ms, half sine Current Maximum A 1.05V Instantaneous VF Forward Voltage = 25C Maximum DC Reverse Current = 25C Rated DC Blocking 500uA TJ= 125C Voltage Typical thermal resistance R OJC 0.6C/W Typical Junction 85 pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse Test: Pulse Width 300 sec, Duty Cycle 1%.
Features
Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability. Reliable low cost construction utilizing molded plastic technique results in inexpensive product.
Operating Temperature: to +150C Storage Temperature: to +150C Maximum Reccurrent Peak Reverse Voltage 800V 1000V Maximum RMS Voltage 560V 700V Maximum DC Blocking Voltage 800V 1000V.
Average Forward IF(AV) = 100C Current Peak Forward Surge IFSM 350A 8.3ms, half sine Current Maximum A 1.05V Instantaneous VF Forward Voltage = 25C Maximum DC Reverse Current = 25C Rated DC Blocking 500uA TJ= 125C Voltage Typical thermal resistance R OJC 0.6C/W Typical Junction 85 pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse Test: Pulse Width 300 sec, Duty Cycle 1%.
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