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137 rating • 67 ulasan
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Rp4.500
IRFP450 IRF450 IRFP IRF 450 14A 500V N-channel Power Mosfit BE02
Rp4.500
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Komponen elektronik
IRFP450 IRF450 IRFP IRF 450 14A 500V N-channel Power Mosfit BE02
Description:
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435.
Features
Product Name : MOSFET;
Model No. : IRFP450
Channel Type : N Channel;
Drain Source Voltage : 500V
Drain Current : 15A;
Mounting Hole Diameter : 3.5mm / 0.138"
Terminal Size : 14 x 1mm / 0.551" x 0.039" ( L* Pitch);
Total Size : 33 x 14 x 4mm / 1.299" x 0.551" x 0.157" (L*W*H)
Description:
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435.
Features
Product Name : MOSFET;
Model No. : IRFP450
Channel Type : N Channel;
Drain Source Voltage : 500V
Drain Current : 15A;
Mounting Hole Diameter : 3.5mm / 0.138"
Terminal Size : 14 x 1mm / 0.551" x 0.039" ( L* Pitch);
Total Size : 33 x 14 x 4mm / 1.299" x 0.551" x 0.157" (L*W*H)
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