Feature: Type Designator: P2003EVG Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 2.5 W Maximum Drain-Source Voltage |Vds|: 30 V Maximum Gate-Source Voltage |Vgs|: 25 V Maximum Drain Current |Id|: 9 A Maximum Junction Temperature (Tj): 150 C Rise Time (tr): 10 nS Drain-Source Capacitance (Cd): 410 pF Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm Package: SOP8