4.3/ 5.0
79% pembeli merasa puas
39 rating • 14 ulasan
5(25)64.1%
4(6)15.38%
3(4)10.26%
2(1)2.56%
1(3)7.69%
Atur jumlah dan catatan
Stok Total: 99957
Subtotal
Rp8.000
RJP63F3 RJP63F3A TO-220 Silicon N Channel IGBT BP81
Rp8.000
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Komponen elektronik
RJP63F3 RJP63F3A TO-220 Silicon N Channel IGBT BP81
Description:
TYPE : Silicon N Channel IGBT High Speed Switching Vces : 630V IC : 40A
Description :
1. Trench gate and thin wafer technology (G6H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 100 ns typ
4. Low leak current ICES= 1 A max
5. Isolated package TO-220FL
Description:
TYPE : Silicon N Channel IGBT High Speed Switching Vces : 630V IC : 40A
Description :
1. Trench gate and thin wafer technology (G6H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 100 ns typ
4. Low leak current ICES= 1 A max
5. Isolated package TO-220FL
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