IRGP50B60PD1PBF IR GP50B60PD1 GP50B60PD IRGP50B60PD1 IRGP50B60PD SMPS IGBT

Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
TO-247AC
GC
E
SMPS IGBT €h2E2WSQQHe
Absolute Maximum Ratings
Parameter Max. Units
V CES Collector-to-Emitter Voltage 600 V
I C @ TC = 25°C Continuous Collector Current 75
I C @ TC = 100°C Continuous Collector Current 45
I CM Pulse Collector Current (Ref. Fig. C.T.4) 150
I LM Clamped Inductive Load Current d 150 A
I F @ T C = 25°C Diode Continous Forward Current 40
I F @ T C = 100°C Diode Continous Forward Current 15
I FRM Maximum Repetitive Forward Current e 60
V GE Gate-to-Emitter Voltage ±20 V
P D @ TC = 25°C Maximum Power Dissipation 390 W
P D @ TC = 100°C Maximum Power Dissipation 156
T J Operating Junction and -55 to +150
T STG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
• Lead-Free