DESCRIPTION N-channel enhancement modevertical D-MOS transistor in a SOT23 envelope. It is designed for use as aSurface Mounted Device (SMD) inthin and thick-film circuits, with applications in relay, high-speed andline transformer drivers.
FEATURES Direct interface to C-MOS, TTL,etc. High-speed switching No secondary breakdown.
Spek: drain-source voltage : 60v drain current : 300mA peak drain current (< 10uS) : 1200mA