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Rp25.000
TK100E10N1 100V 100A N-Ch MOSFET TK 100E10 N1 TO-220 K100E10N1
Rp25.000
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: WKH Elektronik
1.1. ApplicationsApplicationsApplicationsApplications
• Switching Voltage Regulators
2.2.2.2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA
Type Designator: TK100E10N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 255 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 140 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 1500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm
Package: TO-220
• Switching Voltage Regulators
2.2.2.2. FeaturesFeaturesFeaturesFeatures
(1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA
Type Designator: TK100E10N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 255 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 140 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 1500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0034 Ohm
Package: TO-220
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