1pcs Mosfet IRFP4868 Original cabutan IRFP4868PBF N Channel. Type Designator: IRFP4868 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 517 W Maximum Drain-Source Voltage |Vds|: 300 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 70 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 180 nC Rise Time (tr): 16 nS Drain-Source Capacitance (Cd): 612 pF