+ with a monolithically integrated Schottky diode to + provide excellent RDS(ON) + low gate charge. This device is + suitable for use as a low side FET in SMPS,
Feature: - Drain-Source Voltage 30v - Gate-Source Voltage 12v - Continuous Drain Current 36A - Pulsed Drain Current 80A - RDS(ON) (at VGS =10V) < 10m - RDS(ON) (at VGS =4.5) < 13m