5.0/ 5.0
100% pembeli merasa puas
6 rating • 1 ulasan
5(6)100%
4(0)0%
3(0)0%
2(0)0%
1(0)0%
Atur jumlah dan catatan
Stok Total: 79
Subtotal
Rp10.914
RE200B PIR Human Infrared Radial Sensor Phototransistor
Rp10.914
- Kondisi: Baru
- Min. Pemesanan: 1 Buah
- Etalase: Komponen Elektronik
Model RE200B
Sensitive area of 2.0 1.0mm2 element substrate material
Silicon substrate thickness 0.5mm
Operating wavelength 7-14m
The average transmittance75%
The output signal2.5V (420 k blackbody 1Hz bandwidth modulation
frequency 0.3-3.0Hz 72.5db gain )
Noise 200mV (mVp-p) (25 )
The balance of20%
Operating voltage 2.2-15V
Working current 8.5-24A (VD = 10V, Rs = 47k, 25 )
Source voltage 0.4-1.1V (VD = 10V, Rs = 47k, 25 )
Operating temperature -20 - + 70
Storage temperature -35 - + 80 field of 139 126
Description The sensor uses the polarization of pyroelectric material changes
with temperature characteristics of the detection of infrared radiation
sensitive element dual complementary method to suppress interference temperature
changes , improve the work stability of the sensor .
Use
1. The above specifications are the source resistor R2 = 47K measured under
conditions when the user using the sensor can be adjusted R2 size according to
their needs .
2, note the location of the sensing element and the field size , in order to get
the best optical design.
3 , all measurements are based on the voltage signal peak to peak calibration .
B balance of EA and EB , respectively, peak to peak voltage of the sensing
element output signal.
4 , the use of the sensor , the pins bending or welding parts should be more
than 4mm from base .
5 , before the use of sensors , you should refer to the picture pins , in
particular, to prevent a wrong pin
Sensitive area of 2.0 1.0mm2 element substrate material
Silicon substrate thickness 0.5mm
Operating wavelength 7-14m
The average transmittance75%
The output signal2.5V (420 k blackbody 1Hz bandwidth modulation
frequency 0.3-3.0Hz 72.5db gain )
Noise 200mV (mVp-p) (25 )
The balance of20%
Operating voltage 2.2-15V
Working current 8.5-24A (VD = 10V, Rs = 47k, 25 )
Source voltage 0.4-1.1V (VD = 10V, Rs = 47k, 25 )
Operating temperature -20 - + 70
Storage temperature -35 - + 80 field of 139 126
Description The sensor uses the polarization of pyroelectric material changes
with temperature characteristics of the detection of infrared radiation
sensitive element dual complementary method to suppress interference temperature
changes , improve the work stability of the sensor .
Use
1. The above specifications are the source resistor R2 = 47K measured under
conditions when the user using the sensor can be adjusted R2 size according to
their needs .
2, note the location of the sensing element and the field size , in order to get
the best optical design.
3 , all measurements are based on the voltage signal peak to peak calibration .
B balance of EA and EB , respectively, peak to peak voltage of the sensing
element output signal.
4 , the use of the sensor , the pins bending or welding parts should be more
than 4mm from base .
5 , before the use of sensors , you should refer to the picture pins , in
particular, to prevent a wrong pin
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